High Spin-Torque Diode Sensitivity in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Under DC Bias Currents

被引：15
|
作者：
Ishibashi, Shota [1 ]
Ando, Ken [1 ]
Seki, Takeshi [1 ,2 ]
Nozaki, Takayuki [1 ]
Kubota, Hitoshi [3 ]
Yakata, Satoshi [3 ,4 ]
Maehara, Hiroki [3 ]
Fukushima, Akio [3 ]
Yuasa, Shinji [3 ]
Suzuki, Yoshishige [1 ,3 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[3] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[4] INAMORI Frontier Res Ctr, Adv Elect Res Div, Fukuoka 819039, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 10期
关键词：
Magnetoresistance effect; MgO-based magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); spin-torque diode effect; spin-torque diode sensitivity; ROOM-TEMPERATURE; MAGNETORESISTANCE; MULTILAYER; DRIVEN; EXCITATION; EMISSION;
D O I：
10.1109/TMAG.2011.2159830
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a large enhancement of spin-torque diode sensitivity in CoFeB/MgO/CoFeB magnetic tunnel junctions measured under perpendicular magnetic fields and dc bias currents. In the measurement of homodyne detection, a large dc output voltage of 190 mu V was obtained when an RF signal power of -30 dB m and a dc current of +1.0 mA were applied. This value corresponds to the diode sensitivity of 190 mV/mW (260 mV/mW after impedance matching correction). The main origin of this enhancement is an offset of the damping torque and an increase in the precession angle induced by the spin-transfer torque due to the dc bias current application.
引用
收藏
页码：3373 / 3376
页数：4
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