Atomic resolution of interface diffusing in short-period InAs/GaSb superlattice

被引：7
|
作者：
Cu, J. [1 ,2 ]
Yao, Y. [1 ]
Jiang, D. W. [3 ]
Wang, G. W. [3 ]
Wang, Y. G. [1 ]
Shen, X. [1 ]
Yu, R. C. [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2018年 / 124卷 / 24期
关键词：
MOLECULAR-BEAM EPITAXY; SURFACE SEGREGATION; MBE GROWTH; STRAIN; ROUGHNESS; HRTEM;
D O I：
10.1063/1.5059350
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-angle annular dark-field (HAADF) and electron energy loss spectroscopy in a Cs-corrected scanning transmission electron microscope were utilized for characterizing the interfacial chemical structure of the short-period InAs/GaSb superlattices with atomic resolution. The interfacial features determined from HAADF image contrasts and elemental composition profiles demonstrated that each interface width remains below 4.8 monolayers for all elements, while InAs-on-GaSb interfaces are sharper than GaSb-on-InAs interfaces. Tensile mapping revealed that the In and Sb diffusion at the interface may influence more than the other two elements and modulate the realistic lattice in the sublayers. Published by AIP Publishing.
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页数：6
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