High density interconnect (HDI) packaging for microwave and millimeter wave circuits

被引:0
|
作者
Wooldridge, JJ [1 ]
机构
[1] TRW Co Inc, Elect Syst & Technol Div, Redondo Beach, CA 90278 USA
来源
1998 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOL 1 | 1998年
关键词
D O I
暂无
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
High density interconnect packaging can be achieved by several different strategies. One is the use of conventional thick film metallization with several layers on a single substrate. Several substrates are electrically connected together using blindmate vertical interconnects that form a 3-D package. High temperature cofired ceramics (HTCC), such as alumina and aluminum nitride (ALN), use this strategy. Thin film metallization on multiple layers of polyimide will also accomplish similar interconnect densities on a single substrate material with no need for vertical interconnects to adjoining substrates. Laminates composed of Duroid, E-glass. or thermoplastic materials can also be pressed together to form a single high density interconnect substrate. These materials also have sufficiently small loss tangents enabling their use into the millimeter range. This paper discusses the manufacturability, design tradeoffs. performance, and costs of all three technologies. More detailed results will be presented for the high density interconnect using multilayer AlN at X-band; these results will be compared with microwave and millimeter wave packages that are currently in development using laminates or polyimides.
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收藏
页码:369 / 376
页数:8
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