High energy per pulse excimer laser for Silicon annealing

被引：1
|
作者：
Godard, B [1 ]
Zahorski, D [1 ]
机构：
[1] SOPRA, F-92270 Bois Colombes, France
来源：
HIGH-POWER LASER ABLATION, PTS 1-2 | 1998年 / 3343卷
关键词：
high energy per pulse excimer laser; TFT; AMLCD; low temperature poly silicon;
D O I：
10.1117/12.321588
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
45J per pulse XeCl laser with good homogeneity (+/- 1 %) and repeatability (+/- 1 %) allow to increase the quality and decrease the cost of annealing of amorphous Silicon compared to Solid Phase Crystallization and Scanning Excimer Laser Annealing.
引用
收藏
页码：653 / 660
页数：8
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