This paper presents experimental results of a study the influence of nonlinear effects on the range of the phase-sensitive optical time-domain reflectometer. Results from measurements of the impact of the effects of stimulated Raman scattering, stimulated Brillouin scattering, self-phase modulation, and modulation instability are presented. It is shown that the power of the probe pulse for 200 ns does not exceed approximate to 300 mW.
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Department of Electrical and Electronic Engineering, Southern University of Science and TechnologyDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology
Shuaiqi Liu
Feihong Yu
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Department of Electrical and Electronic Engineering, Southern University of Science and TechnologyDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology
Feihong Yu
Rui Hong
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Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, Nanjing UniversityDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology
Rui Hong
Weijie Xu
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Department of Electrical and Electronic Engineering, Southern University of Science and TechnologyDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology
Weijie Xu
Liyang Shao
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Department of Electrical and Electronic Engineering, Southern University of Science and TechnologyDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology
Liyang Shao
Feng Wang
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Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, Nanjing UniversityDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology
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T8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Lomonosov Moscow State Univ, Fac Phys, Moscow 119324, RussiaT8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Bengalskii, D. M.
Kharasov, D. R.
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T8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Natl Res Univ, Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141701, Moscow Region, RussiaT8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Kharasov, D. R.
Fomiryakov, E. A.
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T8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Lomonosov Moscow State Univ, Fac Phys, Moscow 119324, RussiaT8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Fomiryakov, E. A.
Nikitin, S. P.
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T8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, RussiaT8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Nikitin, S. P.
Nanii, O. E.
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T8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Natl Res Univ, Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141701, Moscow Region, RussiaT8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia
Nanii, O. E.
Treshchikov, V. N.
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T8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, RussiaT8 Sensor & IC, Krasnobogatyrskaya Ul 44-1, Moscow 107076, Russia