Inverted P3HT:PCBM organic solar cells on low carbon steel substrates

被引:21
|
作者
Pali, L. Sowjanya [1 ,2 ]
Ganesan, Palaniswamy [3 ]
Garg, Ashish [1 ,2 ]
机构
[1] Indian Inst Technol Kanpur, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
[2] Indian Inst Technol Kanpur, Samtel Ctr Display Technol, Kanpur 208016, Uttar Pradesh, India
[3] Tata Steel, Res Dev & Technol, POB 10000, NL-1970 CA Ijmuiden, Netherlands
关键词
Organic solar cells; Steel substrate; P3HT:PCBM; ZnO; MoO3; PHOTOVOLTAIC DEVICES; ELECTRODES; PERFORMANCE; MORPHOLOGY; THICKNESS; VOLTAGE; LAYER; FILMS;
D O I
10.1016/j.solener.2016.03.061
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Solar cell device fabrication on opaque metallic substrates is limited by the transmission of light from top transparent electrode. Moreover, conductivity of the substrates requires insulation for cell integration in a module. In this manuscript, we report fabrication of inverted ITO-free organic solar cells on opaque steel substrates without use of any lithography with power conversion efficiencies of ca. 1.35%. The device structure was Steel/Insulator/Al/ZnO/P3HT:PC60BM/MoO3/Au. The insulated substrates were first planarized using a thin poly(methymethacrylate) or PMMA layer to minimize the substrate roughness and to enable the fabrication of subsequent layers with minimum roughness. We investigated the effect of thickness of various layers to maximize the performance of these devices with major emphasis on improving the transmission of top electrode to maximize the light absorption in the active layer blend. For best photovoltaic characteristics of the devices, thickness determination of thin transparent conducting layer of gold was carried out by conducting transmission, conductivity and morphological studies. Solution processed ZnO on Aluminum showed ridge like structure which provides larger interfacial" area for the collection of electrons. Photoluminescence measurements on Active layer/MoO3 emphasize the importance of insertion of sufficiently thin MoO3 layer in the device in terms of efficient exciton dissociation. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:339 / 348
页数:10
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