Inverted P3HT:PCBM organic solar cells on low carbon steel substrates
被引:21
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作者:
Pali, L. Sowjanya
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Indian Inst Technol Kanpur, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
Indian Inst Technol Kanpur, Samtel Ctr Display Technol, Kanpur 208016, Uttar Pradesh, IndiaIndian Inst Technol Kanpur, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
Pali, L. Sowjanya
[1
,2
]
Ganesan, Palaniswamy
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Tata Steel, Res Dev & Technol, POB 10000, NL-1970 CA Ijmuiden, NetherlandsIndian Inst Technol Kanpur, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
Ganesan, Palaniswamy
[3
]
Garg, Ashish
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Indian Inst Technol Kanpur, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
Indian Inst Technol Kanpur, Samtel Ctr Display Technol, Kanpur 208016, Uttar Pradesh, IndiaIndian Inst Technol Kanpur, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
Garg, Ashish
[1
,2
]
机构:
[1] Indian Inst Technol Kanpur, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
[2] Indian Inst Technol Kanpur, Samtel Ctr Display Technol, Kanpur 208016, Uttar Pradesh, India
[3] Tata Steel, Res Dev & Technol, POB 10000, NL-1970 CA Ijmuiden, Netherlands
Solar cell device fabrication on opaque metallic substrates is limited by the transmission of light from top transparent electrode. Moreover, conductivity of the substrates requires insulation for cell integration in a module. In this manuscript, we report fabrication of inverted ITO-free organic solar cells on opaque steel substrates without use of any lithography with power conversion efficiencies of ca. 1.35%. The device structure was Steel/Insulator/Al/ZnO/P3HT:PC60BM/MoO3/Au. The insulated substrates were first planarized using a thin poly(methymethacrylate) or PMMA layer to minimize the substrate roughness and to enable the fabrication of subsequent layers with minimum roughness. We investigated the effect of thickness of various layers to maximize the performance of these devices with major emphasis on improving the transmission of top electrode to maximize the light absorption in the active layer blend. For best photovoltaic characteristics of the devices, thickness determination of thin transparent conducting layer of gold was carried out by conducting transmission, conductivity and morphological studies. Solution processed ZnO on Aluminum showed ridge like structure which provides larger interfacial" area for the collection of electrons. Photoluminescence measurements on Active layer/MoO3 emphasize the importance of insertion of sufficiently thin MoO3 layer in the device in terms of efficient exciton dissociation. (C) 2016 Elsevier Ltd. All rights reserved.
机构:
Univ Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, SpainUniv Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, Spain
Del Pozo, G.
Romero, B.
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Univ Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, SpainUniv Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, Spain
Romero, B.
Arredondo, B.
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Univ Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, SpainUniv Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, Spain
Arredondo, B.
Gutierrez-Llorente, A.
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Univ Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, SpainUniv Rey Juan Carlos, Escuela Super Ciencias Expt & Tecnol, Dept Tecnol Elect, C Tulipan S-N, Madrid 28933, Spain
机构:
Freiburger Mat Forschungszentrum, D-79104 Freiburg, GermanyFreiburger Mat Forschungszentrum, D-79104 Freiburg, Germany
Zimmermann, B.
Wuerfel, U.
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Freiburger Mat Forschungszentrum, D-79104 Freiburg, GermanyFreiburger Mat Forschungszentrum, D-79104 Freiburg, Germany
Wuerfel, U.
Niggemann, M.
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Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany
Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, GermanyFreiburger Mat Forschungszentrum, D-79104 Freiburg, Germany
机构:
Univ Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, AlgeriaUniv Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, Algeria
Abdallaoui, M.
Sengouga, N.
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Univ Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, AlgeriaUniv Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, Algeria
Sengouga, N.
Chala, A.
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Univ Mohamed Khider, Lab Phys Thin Films & Applicat, BP 145 RP, Biskra 07000, AlgeriaUniv Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, Algeria
Chala, A.
Meftah, A. F.
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Univ Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, AlgeriaUniv Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, Algeria
Meftah, A. F.
Meftah, A. M.
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Univ Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, AlgeriaUniv Mohamed Khider, Lab Semicond & Metall Mat LMSM, BP 145 RP, Biskra 07000, Algeria
机构:
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Chen, Qi
Ye, Fengye
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Univ Sci & Technol China, Hefei Natl Lab Phys Sci, Microscale & Synerget Innovat Ctr Quantum Informa, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Ye, Fengye
Lai, Junqi
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Lai, Junqi
Dai, Pan
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Dai, Pan
Lu, Shulong
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Lu, Shulong
Ma, Changqi
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div Printed Elect, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Ma, Changqi
Zhao, Yanfei
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn NanoX, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Zhao, Yanfei
Xie, Yi
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Univ Sci & Technol China, Hefei Natl Lab Phys Sci, Microscale & Synerget Innovat Ctr Quantum Informa, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Xie, Yi
Chen, Liwei
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn NanoX, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, CAS Ctr Excellence Nanosci, I Lab, Suzhou 215123, Peoples R China