Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells

被引：0
|
作者：
Zheng, Zhongshan [1 ,2 ]
Li, Zhentao [1 ]
Li, Bo [1 ,2 ]
Luo, Jiajun [1 ,2 ]
Han, Zhengsheng [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2019年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influences of the source and drain resistance of both the nMOSFETs and pMOSFETs on the single event response of SRAM cells have been investigated by the SPICE simulations. The results show that the source and drain resistance of the nMOSFETs can increase the single event upset (SEU) hardness of a cell, whereas the source and drain resistance of the pMOSFETs result in a reduction in the SEU hardness, with the drain region of the OFF-state nMOSFET struck by particles. In addition, the SEU hardness also reveals a non-monotonic variation feature with increasing source and drain resistance.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS - COMMENTS
    DUVVURY, C
    BAGLEE, DAG
    DUANE, MP
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 533 - 534
  • [42] A New Technique to Extract the Source/Drain Series Resistance of MOSFETs
    Fleury, Dominique
    Cros, Antoine
    Bidal, Gregory
    Rosa, Julien
    Ghibaudo, Gerard
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) : 975 - 977
  • [43] MAGNITUDE AND EFFECTS OF SOURCE DRAIN SERIES RESISTANCE IN SUBMICRON MOSFETS
    DIKE, RSU
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1991, 71 (05) : 757 - 769
  • [44] MAGNITUDE AND EFFECTS OF SOURCE DRAIN SERIES RESISTANCE IN SUBMICRON MOSFETS
    DIKE, RSU
    INDIAN JOURNAL OF TECHNOLOGY, 1991, 29 (09): : 448 - 454
  • [45] SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS - REPLY
    SHEU, BJ
    HU, C
    KO, PK
    HSU, FC
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 535 - 535
  • [46] Semi-Empirical Method for Estimation of Single-Event Upset Cross Section for SRAM DICE Cells
    Gorbunov, Maxim S.
    Boruzdina, Anna B.
    Dolotov, Pavel S.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 63 (04) : 2250 - 2256
  • [47] A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells
    Li Peng
    Zhang Min-Xuan
    Zhao Zhen-Yu
    Deng Quan
    NUCLEAR SCIENCE AND TECHNIQUES, 2015, 26 (05)
  • [48] 3-DIMENSIONAL NUMERICAL-SIMULATION OF SINGLE EVENT UPSET OF AN SRAM CELL
    WOODRUFF, RL
    RUDECK, PJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) : 1795 - 1803
  • [49] SRAM single event upset calculation and test using protons in the secondary beam in the BEPC
    Wang Yuanming
    Guo Hongxia
    Zhang Fengqi
    Zhang Keying
    Chen Wei
    Luo Yinhong
    Guo Xiaoqiang
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (09)
  • [50] Neutron Induced Single Event Upset Dependence on Bias Voltage for CMOS SRAM With BPSG
    Vazquez-Luque, Aurelio
    Marin, Jesus
    Antonio Terron, J.
    Pombar, Miguel
    Bedogni, Roberto
    Sanchez-Doblado, Francisco
    Gomez, Faustino
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4692 - 4696
12345