Possible approach to fabricate p-type ZnO through the Be-N codoping method: First-principles calculations

被引:18
|
作者
Tang, Xin [1 ,2 ]
Deng, Yanzhen [3 ]
Wagner, Dustin [4 ]
Yu, Liang [2 ]
Lu, Haifeng [5 ]
机构
[1] Guilin Univ Technol, Key Lab New Proc Technol Nonferrous Met & Mat, Minist Educ, Guilin 541004, Peoples R China
[2] Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China
[3] Guilin Univ Elect Technol, Sch Foreign Studies, Guilin 541004, Peoples R China
[4] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[5] Chinese Acad Sci, Comp Network Informat Ctrd, Beijing 10080, Peoples R China
基金
中国国家自然科学基金;
关键词
Semiconductors; Ab initio calculations; Electronic structure; FILMS; SEMICONDUCTORS; TRANSPARENT; ATOMS; GAN;
D O I
10.1016/j.ssc.2011.10.024
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An ab initio calculation based on density functional theory is applied to study Be-N codoped ZnO and the possible complexes are discussed. The calculated results show that the substitutional N defect at the O site (N-O) easily binds with the interstitial Be (Be-i), rather than the substitutional Be defect at the Zn site (Be-Zn). This indicates that 4Be(Zn)-N-O complex is not a stable acceptor and is unlikely to form. Fortunately, Be-i-3N(O) is of high structural stability and its transition energy is very low due to the impurity band caused by the Be-i-2N(O) passive complex. Therefore, Be-i-3N(O) can serve as a stable source of p-type conductivity. In addition, it is also suggested that Be-N codoped p-type ZnO can be prepared under Zn-rich condition because Be-i-3N(O) has the lowest formation energy in this environment. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1 / 4
页数:4
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