Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates

被引:7
|
作者
Zhao, Kuaile [1 ]
Chen, Guopeng [1 ]
Hernandez, Juliana [2 ]
Tamargo, Maria C. [3 ]
Shen, Aidong [1 ]
机构
[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
[2] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA
[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA
基金
美国国家科学基金会;
关键词
Molecular beam epitaxy; Quantum well; Oxides; Semiconducting II-VI materials; Heterojunction semiconductor devices; TRANSITION;
D O I
10.1016/j.jcrysgro.2015.02.002
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The authors report the growth of ZnO/ZnMgO multiple quantum well (MQW) structures by plasmaassisted molecular beam epitaxy. A set of three MQW samples with different well thicknesses were grown on c-plane sapphire substrates. Structural and optical properties of the samples were characterized by reflection high-energy electron diffraction, high-resolution x-ray diffraction (XRD) and photoluminescence measurements. Clear superlattice satellite peaks and thickness fringes observed in XRD measurements indicate the formation of periodic structure with good interfacial quality and high crystalline quality. Mid infrared absorptions around 3 pm are observed from Fourier transform infrared spectroscopy measurement The polarization-dependent absorption proves that the absorptions are originated from intersubband transitions. (C) 2015 Elsevier B.V. All rights reserve
引用
收藏
页码:221 / 224
页数:4
相关论文
共 50 条
  • [21] ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy
    Ogata, K
    Koike, K
    Tanite, T
    Komuro, T
    Yan, F
    Sasa, S
    Inoue, M
    Yano, M
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 623 - 627
  • [22] The role of surface chemistry in growth and material properties of ZnO epitaxial layers grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy
    Sano, M
    Miyamoto, K
    Kato, H
    Yao, TF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (9AB): : L1050 - L1053
  • [23] Growth of high-quality ZnO thin films on () a-plane sapphire substrates by plasma-assisted molecular beam epitaxy
    Ding, Ping
    Pan, Xinhua
    Ye, Zhizhen
    He, Haiping
    Zhang, Honghai
    Chen, Wei
    Zhu, Chongyu
    Huang, Jingyun
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 112 (04): : 1051 - 1055
  • [24] Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
    Li, LH
    Pan, Z
    Zhang, W
    Lin, YW
    Wang, XY
    Wu, RH
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 527 - 531
  • [25] Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy
    Liu, X. Y.
    Aggerstam, T.
    Janes, P.
    Holmstrom, P.
    Lourdudoss, S.
    Thylen, L.
    Andersson, T. G.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 457 - 460
  • [26] Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy
    Brandt, O
    Waltereit, P
    Dhar, S
    Jahn, U
    Sun, YJ
    Trampert, A
    Ploog, KH
    Taglient, MA
    Tapfer, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1626 - 1639
  • [27] Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
    Han, Seok Kyu
    Lee, Hyo Sung
    Lim, Dong Seok
    Hong, Soon-Ku
    Yoon, Nara
    Oh, Dong-Cheol
    Ahn, Byung Jun
    Song, Jung-Hoon
    Yao, Takafumi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (03):
  • [28] Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy
    Pan, CJ
    Tu, CW
    Song, JJ
    Cantwell, G
    Lee, CC
    Pong, BJ
    Chi, GC
    JOURNAL OF CRYSTAL GROWTH, 2005, 282 (1-2) : 112 - 116
  • [29] Characterization of [ZnO]m[ZnMgO]n multiple quantum wells grown by molecular beam epitaxy
    Koike, K
    Takada, G
    Fujimoto, K
    Sasa, S
    Inoue, M
    Yano, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 191 - 194
  • [30] Systematic Investigation of Growth and Properties of Ga2O3 Films on C-Plane Sapphire Substrates Prepared by Plasma-Assisted Molecular Beam Epitaxy
    Ngo, Trong Si
    Le, Due Duy
    Vuong, Nguyen Quoc
    Hong, Soon-Ku
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (03)