Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction

被引：9

作者：

Khan, Ayaz Arif ^{[1
,2
]}

机构：

[1] Univ Azad Jammu & Kashmir, Dept Phys, Muzaffarabad 13100, Pakistan

[2] Univ Bielefeld, Dept Phys, Thin Films & Phys Nanostruct, D-33501 Bielefeld, Germany

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 06期

关键词：

MT[!text type='Js']Js[!/text; Dielectric reliability; MTJ breakdown; FIELD; SILICON; MODEL; DEPENDENCE; INJECTION; GATE;

D O I：

10.1016/j.microrel.2015.02.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The time-dependent dielectric breakdown has been investigated in a series of nominally identical Co-Fe-B/MgO/Co-Fe-B junctions by voltage ramp experiments. The results divulge that the breakdown voltage strongly depends on the polarity of the applied voltage, junction area, ramp speed and the annealing temperature. Magnetic tunnel junctions (MTJs) with positive bias on the top electrode show higher breakdown voltage than MTJs with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 degrees C. The experimental data can be described by different specific forms of breakdown probability functions which lead to different extrapolation of life time of junctions. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：894 / 902

页数：9

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