Perpendicular magnetization and exchange bias in epitaxial Cu/Ni/Fe50Mn50 thin films -: art. no. 024447

被引:6
|
作者
Xi, HW [1 ]
Ambrose, TF
Klemmer, TJ
van de Veerdonk, R
Howard, JK
White, RM
机构
[1] Seagate Technol, RHO, Bloomington, MN 55435 USA
[2] Seagate Res Ctr, Pittsburgh, PA 15222 USA
[3] Carnegie Mellon Univ, Data Storage Syst Ctr, Pittsburgh, PA 15213 USA
关键词
D O I
10.1103/PhysRevB.72.024447
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The perpendicular magnetic anisotropy has been achieved in epitaxial Cu/Ni thin films deposited by magnetron sputtering. A thin Fe50Mn50 layer deposited on top of the Ni layer induces perpendicular exchange bias arising from the interface exchange coupling. The hysteresis loops, the ferromagnetic thickness dependence, and the angular dependence of the exchange bias in as-deposited and field-cooled Cu/Ni/Fe50Mn50 trilayer thin films have been investigated. This study reveals many interesting features that are much different from those of in-plane exchange biased systems. It suggests distinct magnetization reversal behavior, domain nucleation, and domain wall motion of the Ni layer in the presence of interface coupling with Fe50Mn50, which deserves further study.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Evolution of the electronic structure in epitaxial Co, Ni, and Cu films -: art. no. 153409
    Pampuch, C
    Rader, O
    Kläsges, R
    Carbone, C
    PHYSICAL REVIEW B, 2001, 63 (15)
  • [42] Magnetic anisotropy of NiO epitaxial thin films on Fe(001) -: art. no. 014410
    Finazzi, M
    Portalupi, M
    Brambilla, A
    Duò, L
    Ghiringhelli, G
    Parmigiani, F
    Zacchigna, M
    Zangrando, M
    Ciccacci, F
    PHYSICAL REVIEW B, 2004, 69 (01):
  • [43] Annealing effect on exchange bias in Ni81Fe19/Cr50Mn50bilayers
    Xi, H.
    Bian, B.
    Zhuang, Z.
    Laughlin, D.E.
    White, R.M.
    IEEE Transactions on Magnetics, 2000, 36 (5 I) : 2644 - 2646
  • [44] Role of electron scattering in the magnetization relaxation of thin Ni81Fe19 films -: art. no. 214416
    Ingvarsson, S
    Ritchie, L
    Liu, XY
    Xiao, G
    Slonczewski, JC
    Trouilloud, PL
    Koch, RH
    PHYSICAL REVIEW B, 2002, 66 (21) : 1 - 5
  • [45] Annealing effect on exchange bias in Ni81Fe19/Cr50Mn50 bilayers
    Xi, HW
    Bian, B
    Zhuang, ZL
    Laughlin, DE
    White, RM
    IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) : 2644 - 2646
  • [46] Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films
    Behler, Anna
    Teichert, Niclas
    Dutta, Biswanath
    Waske, Anja
    Hickel, Tilmann
    Auge, Alexander
    Huetten, Andreas
    Eckert, Juergen
    AIP ADVANCES, 2013, 3 (12):
  • [47] Critical angle for irreversible switching of the exchange-bias direction in NiO-Cu-Ni81Fe19 films -: art. no. 054405
    de Haas, O
    Schäfer, R
    Schultz, L
    Schneider, CM
    Chang, YM
    Lin, MT
    PHYSICAL REVIEW B, 2003, 67 (05):
  • [48] The number of Cu lamination effect on current-perpendicular-to-plane giant-magnetoresistance of spin valves with Fe50Co50 alloy -: art. no. 113907
    Yuasa, H
    Fukuzawa, H
    Iwasaki, H
    Sahashi, M
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
  • [49] The effect of pinned uncompensated moments on the exchange bias in Ni81Fe19/Ni50Mn50/Ni81Fe19 trilayers
    Jiao, Zhiwei
    Qu, Qian
    Ding, Zhiqian
    Wang, Yingqi
    Wu, Leilei
    Zhou, Yun
    Li, Jingbin
    Thin Solid Films, 2022, 706
  • [50] The effect of pinned uncompensated moments on the exchange bias in Ni81Fe19/Ni50Mn50/Ni81Fe19 trilayers
    Jiao, Zhiwei
    Qu, Qian
    Ding, Zhiqian
    Wang, Yingqi
    Wu, Leilei
    Zhou, Yun
    Li, Jingbin
    THIN SOLID FILMS, 2020, 706