Influence of Laser Radiation on Optical Properties of High Resistivity Crystals CdTe and Solid Solutions Cd1-xZnxTe

被引：0

作者：

Gentsar, P. O. ^{[1
]}

Levytskyi, S. M. ^{[1
]}

机构：

[1] NAS Ukraine, VE Lashkaryov Inst Semicond Phys, Kiev, Ukraine

来源：

PHYSICS AND CHEMISTRY OF SOLID STATE | 2020年 / 21卷 / 01期

关键词：

CdTe; CdZnTe; transmission; reflection; absorption; laser irradiation;

D O I：

10.15330/pcss.21.1.68-72

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, the transmission and reflection spectra of p-CdTe (111) single crystals; solid solutions of Cd1-xZnxTe (x = 0.1) in the range (0.2 - 1.7).10(-6) m before and after laser irradiation at the wavelength = 532 nm in the energy range (66 - 164) mJ/cm(2) for CdTe (111) and in the energy range 46.6 mJ/cm(2)-163.5 mJ/cm(2) for Cd1-xZnxTe (x = 0.1) are measured. It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb point defects.

引用

页码：68 / 72

页数：5

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