EFFECT OF THERMAL ANNEALING ON THE MICROSTRUCTURE OF CDTE AND CD1-XZNXTE CRYSTALS

被引：18
|
作者：
SHEN, J
AIDUN, DK
REGEL, L
WILCOX, WR
机构：
[1] Center for Advanced Materials Processing, Clarkson University, Potsdam
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期
关键词：
D O I：
10.1016/0921-5107(93)90039-P
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of annealing in cadmium or tellurium vapor on CdTe and Cd0.96Zn0.04Te was investigated using characterization methods. Tellurium-rich precipitates with a size between 0.5 and 5.0 mum were no longer seen after annealing in tellurium vapor, while precipitates between 5.0 and 15 mum appeared. Annealing in cadmium vapor caused the concentration of the larger precipitates to diminish. The lattice constant was decreased by annealing in cadmium vapor and increased by annealing in tellurium vapor. The etch pit density was decreased by annealing in tellurium vapor and increased by annealing in cadmium vapor.
引用
收藏
页码：182 / 185
页数：4
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