Spontaneous emission control in quantum well laser diodes

被引：3

作者：

Summers, HD ^{[1
]}

Berry, GM ^{[1
]}

Lewis, GW ^{[1
]}

Blood, P ^{[1
]}

机构：

[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

来源：

OPTICS EXPRESS | 1998年 / 2卷 / 04期

关键词：

D O I：

10.1364/OE.2.000151

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Bragg reflectors to define a micro-cavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130K there is an enhancement. These changes to the spontaneous recombination process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the micro-cavity in altering the overlap of the electro-magnetic field with the quantum well dipole oscillators. (C) 1997 Optical Society of America.

引用

页码：151 / 156

页数：6

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