Inspecting EUV mask blanks with a 193-nm system

被引:10
|
作者
Stokowski, Stan [1 ]
Glasser, Joshua [1 ]
Inderhees, Gregg [1 ]
Sankuratri, Phani [2 ]
机构
[1] KLA Tencor Corp, 1 Technol Dr, Milpitas, CA 95035 USA
[2] Phani Sankuratri, Fremont, CA 94539 USA
来源
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY | 2010年 / 7636卷
关键词
EUV blank inspection; phase defects; particles; DUV inspection; EUV multilayer roughness;
D O I
10.1117/12.850825
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Data and simulation results characterizing the capability of a DUV system to inspect EUV mask blanks and substrates are reported. Phase defects and particles on multilayer (ML) surfaces, ARC-coated absorber, and substrate material are considered. In addition to the previously reported results of inspecting phase defects on multilayer surfaces, phase defects on a quartz substrate surface are shown. The principle of phase detection is described. Simulations show that the 22-nm node requirement for phase defect detection should be met, assuming a reduction in the multilayer roughness. Initial inspections of deposited SiO2 spheres show sensitivities of at least 40 nm on ML and quartz; however, the availability of calibrated spheres of smaller diameters has limited testing below this value. Simulation results show relative sensitivities for detecting SiO2 spheres of different diameters on various EUV materials.
引用
收藏
页数:9
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