Thermoelectric properties of finite graphene antidot lattices

被引:133
|
作者
Gunst, Tue [1 ]
Markussen, Troels [2 ]
Jauho, Antti-Pekka [1 ]
Brandbyge, Mads [1 ]
机构
[1] Tech Univ Denmark, Dept Micro & Nanotechnol DTU Nanotech, DK-2800 Lyngby, Denmark
[2] Tech Univ Denmark, Dept Phys, Ctr Atom Scale Mat Design CAMD, DK-2800 Lyngby, Denmark
关键词
THERMAL-CONDUCTIVITY; TRANSPORT; POWER; HEAT;
D O I
10.1103/PhysRevB.84.155449
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present calculations of the electronic and thermal transport properties of graphene antidot lattices with a finite length along the transport direction. The calculations are based on the pi-tight-binding model and the Brenner potential. We show that both electronic and thermal transport properties converge fast toward the bulk limit with increasing length of the lattice: only a few repetitions (similar or equal to 6) of the fundamental unit cell are required to recover the electronic band gap of the infinite lattice as a transport gap for the finite lattice. We investigate how different antidot shapes and sizes affect the thermoelectric properties. The resulting thermoelectric figure of merit, ZT, can exceed 0.25, and it is highly sensitive to the atomic arrangement of the antidot edges. Specifically, hexagonal holes with pure armchair edges lead to an order-of-magnitude larger ZT as compared to pure zigzag edges. We explain this behavior as a consequence of the localization of states, which predominantly occurs for zigzag edges, and of an increased splitting of the electronic minibands, which reduces the power factor S(2)G(e) (S is the Seebeck coefficient and G(e) is the electric conductance).
引用
收藏
页数:11
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