Monolithic voltage conversion in low-voltage CMOS technologies

被引：2
|
作者：
Kursun, V [1 ]
De, VK
Friedman, EG
Narendra, SG
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[2] Intel Corp, Intel Labs, Circuit Res, Hillsboro, OR 97124 USA
[3] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
来源：
MICROELECTRONICS JOURNAL | 2005年 / 36卷 / 09期
关键词：
low-voltage DC-DC converters; monolithic DC-DC conversion; high DC-DC voltage conversion ratio; transistor reliability; high-voltage stress;
D O I：
10.1016/j.mejo.2005.03.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-to-low switching DC-DC converter that operates at input voltages up to two times as high as the maximum voltage permitted in a low-voltage CMOS technology is proposed in this paper. The proposed circuit technique is based on a cascode bridge that maintains the steady-state voltage differences among the terminals of all of the transistors within a range imposed by a specific low-voltage CMOS technology. An efficiency of 87.8% is achieved for 3.6-0.9 V conversion assuming a 0.18 mu m CMOS technology. The DC-DC converter operates at a switching frequency of 97 MHz while supplying a DC current of 250 mA to the load. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：863 / 867
页数：5
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