Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET

被引：0

作者：

Kumar, A

Kalra, E

Bose, S

Singh, A

Bindra, S

Haldar, S

Gupta, RS

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India

[2] Multimedia Univ, Melaka 75450, Malaysia

[3] Motilal Nehru Coll, Dept Phys, New Delhi 110021, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2001年 / 39卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An expression for channel length modulation factor is also developed and the substrate current is calculated.

引用

页码：731 / 737

页数：7

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