Synthesis of Nitrogen-Doped Graphene by Plasma-Enhanced Chemical Vapor Deposition

被引：33

作者：

Terasawa, Tomo-o ^{[1
]}

Saiki, Koichiro ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Chem, Kashiwa, Chiba 2778561, Japan

[2] Univ Tokyo, Dept Complex Sci & Engn, Kashiwa, Chiba 2778561, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 05期

关键词：

GROWTH; FILMS; SPECTROSCOPY; CATALYSTS; GRAPHITE; PT(111); GAS;

D O I：

10.1143/JJAP.51.055101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synthesis of nitrogen-doped graphene on Cu foils by plasma-enhanced chemical vapor deposition (PE-CVD) and the growth mechanism of doped graphene were investigated. Nitrogen atoms are incorporated into the graphene lattice and most of them exist at a graphitic (quaternary) site. Plasma reaction facilitates the doping of nitrogen atoms even at a substrate temperature as high as 950 degrees C. Doped nitrogen atoms seem to distort the graphene lattice, which causes island-like growth rather than a layer-by-layer growth. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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