Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon

被引：10
|
作者：
Bleka, J. H. [1 ]
Pintilie, I. [2 ,3 ]
Monakhov, E. V. [1 ]
Avset, B. S. [4 ]
Svensson, B. G. [1 ]
机构：
[1] Univ Oslo, Dept Phys, N-0316 Oslo, Norway
[2] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany
[3] Natl Inst Mat Phys, Bucharest 077125, Romania
[4] SINTEF ICT, Microsyst & Nanotechnol, N-0314 Oslo, Norway
来源：
PHYSICAL REVIEW B | 2008年 / 77卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.77.073206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 degrees C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal stability. At long annealing times, the process is reversed and the concentration of the latter defect is reduced, while the VO center partly recovers. The divacancy (V-2) center anneals in parallel with the initial annealing of the VO center, and the loss in V-2 exhibits a one-to-one proportionality with the appearance of a hole trap 0.23 eV above the valence-band edge attributed to a divacancy-hydrogen (V2H) center.
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页数：4
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