Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

被引：21
|
作者：
Wang, Wenqing [1 ]
Zhang, Baolin [1 ]
Zhao, Hongbin [2 ]
机构：
[1] Guilin Univ Technol, Key Lab New Proc Technol Nonferrous Met & Mat, Guangxi Key Lab Opt & Elect Mat & Devices, Coll Mat Sci & Engn,Minist Educ, Jian Gan Rd 12, Guilin 541004, Peoples R China
[2] Gen Res Inst Nonferrous Met, State Key Lab Adv Mat Smart Sensing, Beijing 100088, Peoples R China
来源：
RESULTS IN PHYSICS | 2020年 / 16卷
关键词：
Resistive switching; Forming-free; ECM; TCM; Conductive filament; MECHANISMS;
D O I：
10.1016/j.rinp.2020.103001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Resistive switching devices are promising candidates to replace today's nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room temperature were shown for Ag/Ti/CeO2/Pt devices. Without forming step, the device exhibited low set voltage (about 0.3 V) and reset voltage (about -0.3 V to -0.6 V) in BRS behavior, which is beneficial for nonvolatile memory application. The I-V characteristics were analyzed, and it was concluded that the switching mechanism in BRS is dominated by the electrochemical metallization mechanism (ECM), while in URS, conduction is dominated by thermochemical mechanism (TCM).
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页数：5
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