Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

被引：0

作者：

Yen, ST ^{[1
]}

Lee, CP ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 09期

关键词：

doped lasers; quantum well; quantum-well lasers; semiconductor device modeling; semiconductor lasers; spontaneous emission; visible lasers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We theoretically analyze 630-nm band GaInP-AIGaInP tensile-strained quantum-well (QW) lasers with doping in the active region. The radiative current can be significantly reduced by introducing n-type doping in the active region. However, this advantage is reduced by the increase of the leakage current, As a result, the threshold current is reduced and the emission wavelength is shortened for multiquantum-well (MQW) lasers by n-type doping. But for single-quantum-well (SQW) lasers, because of the large increase of the leakage current, the threshold current increases with n-type doping.

引用

页码：1644 / 1651

页数：8

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