Generation-recombination processes in semiconductors

被引：40

作者：

Volovichev, IN ^{[1
]}

Gurevich, YG

机构：

[1] Natl Acad Sci Ukraine, Inst Radioelect, UA-310085 Kharkov, Ukraine

[2] Inst Politecn Nacl, CINVESTAV, Dept Fis, Mexico City 07000, DF, Mexico

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 03期

关键词：

Recombination; Charge Carrier; Magnetic Material; Temperature Field; Thermodynamic Equilibrium;

D O I：

10.1134/1.1356153

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A unified methodical approach to investigate the transport phenomena in semiconductors is formulated. Various recombination models used in studying the transport phenomena and the establishment of equilibrium in semiconductor structures are analyzed. New expressions describing the recombination processes under the steady-state conditions in arbitrary temperature fields are derived. The recombination process in the hot-carrier theory used when the temperatures of the charge carriers and phonons do not coincide was analyzed. Manifestations of the quasi-neutrality condition in thermodynamic equilibrium and transport phenomena are studied. (C) 2001 MAIK "Nauka / Interperiodica".

引用

页码：306 / 315

页数：10

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