Ultraviolet Photodetectors With 2-D Indium-Doped ZnO Nanostructures

In this paper, we developed a simple method to fabricate an indium-doped ZnO nanostructure ultraviolet (UV) photodetector (PD) on a glass substrate. Through the aqueous chemical solution method, the indium-doped ZnO nanostructure uniformly grew on a glass substrate. The average length and diameter were 3.06 mu m and 38 nm, respectively. At 1 V bias, the photo-to-dark current ratio of the indium-doped ZnO PD was 740 under UV light irradiation (365 nm). The sample exhibited fast response and recovery time. The increase and decrease times were 3.02 and 1.53 s, correspondingly. When irradiated at 360 nm, the UV-visible rejection ratio of the indium-doped ZnO nanostructure PD was approximately 312. The indium-doped ZnO nanostructure PD exhibited high sensitivity, fast response and recovery times, and good orientation properties.