Mirco Signal Wireless-communication Device based on GaN-on-Silicon platform with light emitting Diodes

被引:0
|
作者
Yuan, Wei [1 ]
Li, Xin [1 ]
Gao, Xumin [1 ]
Yuan, Jialei [1 ]
Yang, Yongchao [1 ]
Wang, Yongjin [1 ]
机构
[1] Nangjing Univ Posts & Telecommun, Dept Commun & Informat Engn, Nanjing 21003, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
light-emitting diode (LED); photo-detector (PD); signal transmission; wireless communication; bit error rate (BER); MONOLITHIC INTEGRATION; WAVE-GUIDES;
D O I
10.1109/ICRIS.2017.59
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
In this paper, we demonstrate a photonic wireless communication device based on GaN-on-silicon platform with membrane light emitting diodes for in-plane ultra-short distance visible light communication (VLC). We utilize two bidirectional InGaN/GaN multiple-quantum-well devices integrated on one chip as signal emitter and receiver, which are operated under light-emitting diode (LED) or photo detector (PD) mode respectively. The peak wavelength 450nm in electroluminescent (EL) spectra is applicable for blue range. As a micro-scale device, it can be operated on higher frequency above 30MHz and the optimum frequency is from 30MHz to 90MHz. The light with direct modulation carrying digital signal is detected by PD and has excellent transmit performance at 50Mbps rate with low inter-symbol interference (ISI). In particular, the integrated device has the lowest bit error rate (BER) at 80MHz bandwidth. The stable transmit frequency and communication rate could be applied for small clients such as smart phone and so on. For further study, the improved rate with better performance will let the client maintain the 4G even the 4G(+) transmission rate for a long term.
引用
收藏
页码:210 / 213
页数:4
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