Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions

被引：7
|
作者：
Zhao, J
Yu, YH
Mao, DS
Lin, ZX
Jiang, BY
Yang, GQ
Liu, XH
Zou, SC
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
photoluminescence; ion implantation; SiO2; films; light-emitting materials;
D O I：
10.1016/S0168-583X(98)00692-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Intense UV-visible photoluminescence (PL) was observed at room temperature from thermal SiO2 films implanted by Si and N ions. There were two PL bands at similar to 330 and similar to 660 nm shown in the as-implanted sample, while another band at similar to 430 nm was observed apart from the other two bands. No shifts were observed in the PL spectra with increasing annealing temperature. The annealing temperature dependences of N distribution, PL intensity and electron spin resonance (ESR) signals were also measured. It is found that the PL is related to the N in the films. The PL is suggested to originate from complex of Si, N and . (C) 1999 Elsevier Science B.V. All lights reserved.
引用
收藏
页码：1002 / 1006
页数：5
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