Pulsed-laser deposition of polycrystalline Ni films: A three-dimensional kinetic Monte Carlo simulation

被引:17
|
作者
Tan, X [1 ]
Zhou, YC [1 ]
Zheng, XJ [1 ]
机构
[1] Xiangtan Univ, Fac Mat & Optoelect Phys, Key Lab Adv Mat & Rheol Properties Minist Educ, Xiangtan 411105, Peoples R China
基金
中国国家自然科学基金;
关键词
kinetic Monte Carlo simulations; pulsed-laser deposition; polycrystalline thin film growth; nickel;
D O I
10.1016/j.susc.2005.05.047
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A three-dimensional (3D) kinetic Monte Carlo simulation was performed for the growth of polycrystalline Ni films on a Ni(100) substrate via pulsed-laser deposition (PLD) on the basis of the deposition of the incident atoms that nucleate randomly and the adatoms surface diffusion combining with a growth restriction within identically oriented grains. The simulations showed that the grains grow rapidly in PLD until they reach the critical grain size that is about 7 monolayer (ML) for the substrate temperature of T = 300 K, and then grow slowly with the time span of the simulations. Moreover, we compared PLD with molecular beam epitaxy (MBE), and found that PLD is characteristically different from MBE at the beginning of the deposition under the condition of the same deposition rate in both cases. However, the differences became not obvious as time unfolds and growth proceeds later. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 183
页数:9
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