InAs channel HFETs: Current status and future trends

被引：1
|
作者：
Bolognesi, CR [1 ]
机构：
[1] Simon Fraser Univ, Dept Phys, CSDL, Burnaby, BC V5A 1S6, Canada
来源：
1998 URSI SYMPOSIUM ON SIGNALS, SYSTEMS, AND ELECTR ONICS | 1998年
关键词：
D O I：
10.1109/ISSSE.1998.738036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review the development of InAs/AlSb HFETs, and discuss some of the outstanding problems along With their potential solutions. InAs/AlSb HFETs offer good microwave performance at very low biases, and the?: are therefore of interest for low-power wireless applications as well as ultrahigh frequency transistors: preliminary measure I THz bandwidth may be achieved.
引用
收藏
页码：56 / 61
页数：6
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