Characterization of strain relaxation behavior in Si1-x Ge x epitaxial layers by dry oxidation

被引：0

作者：

Jang, Hyunchul ^{[1
]}

Kim, Byongju ^{[1
]}

Koo, Sangmo ^{[1
]}

Park, Seran ^{[1
]}

Ko, Dae-Hong ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2017年 / 71卷 / 10期

关键词：

Silicon Germanium (SiGe); Oxidation; Pile-up; Strain relaxation; Reciprocal space mapping (RSM); THREADING DISLOCATION DENSITIES; THIN-FILMS; SIGE; CHANNEL; HYDROGEN; SILICON; IMPLANTATION; GERMANIUM; MECHANISM; DIFFUSION;

D O I：

10.3938/jkps.71.701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We fabricated fully strained Si0.77Ge0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the effect of oxidation temperatures and times. After the oxidation process, a Ge-rich layer was formed between the oxide and the remaining Si0.77Ge0.23 layer. Using reciprocal space mapping measurements, we confirmed that the strain of the Si0.77Ge0.23 layers was efficiently relaxed after oxidation, with a maximum relaxation value of 70% after oxidation at 850 A degrees C for 120 min. The surface of Si0.77Ge0.23 layer after strain relaxation by dry oxidation was smoother than a thick Si0.77Ge0.23 layer, which achieved a similar strain relaxation value by increasing the film thickness. Additionally, N2 annealing was performed in order to compare its effect on the relaxation compared to dry oxidation and to identify relaxation mechanisms, other than the thermally driven ones, occurring during dry oxidation.

引用

页码：701 / 706

页数：6

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