Printed Nanolaser on Silicon

被引:43
|
作者
Lee, Jungmin [1 ]
Karnadi, Indra [1 ,2 ]
Kim, Jin Tae [3 ]
Lee, Yong-Hee [1 ]
Kim, Myung-Ki [4 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Daejeon 34141, South Korea
[2] Univ Kristen Krida Wacana, Dept Elect Engn, Jakarta Barat 11470, Indonesia
[3] Elect & Telecommun Res Inst, Creat Future Res Lab, Daejeon 34129, South Korea
[4] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 02841, South Korea
来源
ACS PHOTONICS | 2017年 / 4卷 / 09期
基金
新加坡国家研究基金会;
关键词
silicon photonics; III-V/Si integration; nanolasers; photonic crystals; silicon waveguides; photonic integrated circuits; QUANTUM-DOT LASERS; ON-CHIP; NANOCAVITY; PHOTONICS;
D O I
10.1021/acsphotonics.7b00488
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 mu m, 88% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.
引用
收藏
页码:2117 / 2123
页数:7
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