Study on strain and piezoelectric polarization of AlN thin films grown on Si

被引：12

作者：

Deng, YZ ^{[1
]}

Kong, YC ^{[1
]}

Zheng, YD ^{[1
]}

Zhou, CH ^{[1
]}

Xi, DJ ^{[1
]}

Chen, P ^{[1
]}

Gu, SL ^{[1
]}

Shen, B ^{[1
]}

Zhang, R ^{[1
]}

Han, P ^{[1
]}

Jiang, R ^{[1
]}

Shi, Y ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1116/1.1927533

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The strain and piezoelectric polarization of AIN thin films grown on Si(111) substrates by metalorganic chemical-vapor deposition were investigated by using x-ray diffraction and Raman measurements. The stress and piezoelectric polarization of the AIN films were analyzed with E-2 (high) phonon-mode frequency shifts in Raman spectra. The result indicates that the biaxial compressive stress is about 4.3 GPa, and the piezoelectric polarization is about 1.91 X 10(-2) C/m(2). Phonons of Si-N bonds were also observed accompanying phonons of AIN crystal in Raman spectra, which indicate the interdiffusion of Si and N atoms during growth. (c) 2005 American Vacuum Society.

引用

页码：628 / 630

页数：3

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