Study on strain and piezoelectric polarization of AlN thin films grown on Si

被引：12

作者：

Deng, YZ ^{[1
]}

Kong, YC ^{[1
]}

Zheng, YD ^{[1
]}

Zhou, CH ^{[1
]}

Xi, DJ ^{[1
]}

Chen, P ^{[1
]}

Gu, SL ^{[1
]}

Shen, B ^{[1
]}

Zhang, R ^{[1
]}

Han, P ^{[1
]}

Jiang, R ^{[1
]}

Shi, Y ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1116/1.1927533

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The strain and piezoelectric polarization of AIN thin films grown on Si(111) substrates by metalorganic chemical-vapor deposition were investigated by using x-ray diffraction and Raman measurements. The stress and piezoelectric polarization of the AIN films were analyzed with E-2 (high) phonon-mode frequency shifts in Raman spectra. The result indicates that the biaxial compressive stress is about 4.3 GPa, and the piezoelectric polarization is about 1.91 X 10(-2) C/m(2). Phonons of Si-N bonds were also observed accompanying phonons of AIN crystal in Raman spectra, which indicate the interdiffusion of Si and N atoms during growth. (c) 2005 American Vacuum Society.

引用

页码：628 / 630

页数：3

共 50 条

[1] Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate
S. A. Kukushkin
A. V. Osipov
O. N. Sergeeva
D. A. Kiselev
A. A. Bogomolov
A. V. Solnyshkin
E. Yu. Kaptelov
S. V. Senkevich
I. P. Pronin
Physics of the Solid State, 2016, 58 : 967 - 970
[2] Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate
Kukushkin, S. A.
Osipov, A. V.
Sergeeva, O. N.
Kiselev, D. A.
Bogomolov, A. A.
Solnyshkin, A. V.
Kaptelov, E. Yu.
Senkevich, S. V.
Pronin, I. P.
PHYSICS OF THE SOLID STATE, 2016, 58 (05) : 967 - 970
[3] SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate
Sergeeva, O. N.
Bogomolov, A. A.
Solnyshkin, A. V.
Komarov, N. V.
Kukushkin, S. A.
Krasovitsky, D. M.
Dudin, A. L.
Kiselev, D. A.
Ksenich, S. V.
Senkevich, S. V.
Kaptelov, E. Yu.
Pronin, I. P.
FERROELECTRICS, 2015, 477 (01) : 121 - 130
[4] Highly piezoelectric AlN thin films grown on amorphous, insulating substrates
Artieda, Alvaro
Sandu, Cosmin
Muralt, Paul
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (03): : 390 - 393
[5] Microstructure of low temperature grown AlN thin films on Si(111)
Auner, GW
Jin, F
Naik, VM
Naik, R
JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7879 - 7883
[6] Ion energy effects in AlN thin films grown on Si(111)
Meng, WJ
Doll, GL
JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) : 1788 - 1793
[7] Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering
Terai, Yoshikazu
Haraguchi, Kengo
Ichinose, Ryo
Oota, Hiroki
Yonezawa, Ken
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SA)
[8] Strain states in GaN films grown on Si(111) and Si(110) substrates using a thin AlN/GaN superlattice interlayer
Shen, X. Q.
Takahashi, T.
Ide, T.
Shimizu, M.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 473 - 476
[9] Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates
Shen, Xu-Qiang
Takahashi, Tokio
Kawashima, Hiroyuki
Ide, Toshihide
Shimizu, Mitsuaki
Okumura, Hajime
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[10] Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
Tungare, M.
Kamineni, V. K.
Shahedipour-Sandvik, F.
Diebold, A. C.
THIN SOLID FILMS, 2011, 519 (09) : 2929 - 2932

← 1 2 3 4 5 →