Ag-doped PbS thin films by nebulizer spray pyrolysis for solar cells

被引:35
|
作者
Rosario, S. Rex [1 ]
Kulandaisamy, I [1 ]
Kumar, K. Deva Arun [2 ]
Ramesh, K. [2 ]
Ibrahium, Hala A. [3 ,4 ]
Awwad, Nasser S. [5 ]
机构
[1] Arul Anandar Coll, PG & Res Dept Phys, Karumathur, India
[2] Indian Inst Sci, Dept Phys, Bengaluru, India
[3] King Khalid Univ, Fac Sci, Dept Biol, Abha, Saudi Arabia
[4] Nucl Mat Author, Dept Biol, POB 530, El Maadi, Egypt
[5] King Khalid Univ, RCAMS, POB 9004, Abha 61413, Saudi Arabia
关键词
hall effect; PbS; Ag; solar cell; thin film; XRD; CHEMICAL BATH DEPOSITION; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; FABRICATION; EFFICIENCY; SUBSTRATE; GROWTH;
D O I
10.1002/er.5227
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Silver (Ag)-doped PbS (PbS:Ag) thin films of 616 to 745 nm in thickness were prepared on glass substrates via cost-effective nebulizer spray method by adding different Ag levels from 2% to 8% at 200 degrees C. For solar cell applications, the effect of Ag doping concentration on structural, morphological, optical, photoluminescence, and electrical chattels of PbS thin film has been studied. X-ray diffraction pattern confirmed the polycrystalline behavior of the prepared PbS:Ag films with cubic crystalline nature. The crystalline size and texture coefficient were increased by increasing Ag doping concentration. From the morphological studies by scanning electron microscope (SEM) and atomic force microscope (AFM), the grain size of the films and surface roughness values were increased for the increase in Ag doping concentration. EDS spectra confirmed the existence of Ag, Pb, and S elements in the select 6% Ag-doped PbS film. Peaks related to silver oxide started to emerge at 6% of Ag doping level. The optical direct band gap value was reduced from 1.51 to 1.17 eV for Ag doping from 2% to 6% and thereby slightly increased as 1.79 eV for 8% Ag doping level. For all PbS:Ag films, the photoluminescence spectrum emitted a strong near band edge (NBE) emission at approximately 580 nm, meaning better optical quality. Hall effect measurements evidenced that Ag doping provides enhancement on the characteristics of mobility, carrier concentration, and resistivity with p-type conducting nature. The observed high carrier concentration and low resistivity values were 4.32 x 10(14) cm(-3) and 80 omega cm, for 6% Ag-doped PbS film. The FTO/CdS/PbS:Ag heterostructure solar cell was formed from 6% Ag-doped film.
引用
收藏
页码:4505 / 4515
页数:11
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