Modeling of the signal induced by an incident radiation in semi-insulating GaAs detectors

被引：0
|
作者：
Cola, A [1 ]
Vasanelli, L [1 ]
Reggiani, L [1 ]
机构：
[1] CNR, Ist Studio Nuovi Mat Elettron, I-73100 Lecce, Italy
来源：
SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷
关键词：
D O I：
10.1557/PROC-487-453
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We develop a Monte Carlo simulator of the charge signal induced by an external radiation on a semi-insulating GaAs detector. The role played by trapping and detrapping processes and the dynamics of generated carriers are investigated. The relative contribution to the charge signal of fast and slow time components as well as the time constant of the slow component are studied as a function of the applied voltage. Present findings provide a physical interpretation of available experimental results.
引用
收藏
页码：453 / 458
页数：6
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