Carrier dynamics in p-type InGaAs/GaAs quantum dots

被引：4
|
作者：
Wen, X. M.
Dao, L. V. [1 ]
Davis, J. A.
Hannaford, P.
Mokkapati, S.
Tan, H. H.
Jagadish, C.
机构：
[1] Swinburne Univ Technol, ARC Ctr Excellence Coherent Xray Sci, Hawthorn, Vic 3122, Australia
[2] Swinburne Univ Technol, Ctr Atom Opt & Ultra Spect, Hawthorn, Vic 3122, Australia
[3] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat & Engn, Canberra, ACT 0200, Australia
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2007年 / 18卷 / Suppl 1期
关键词：
D O I：
10.1007/s10854-007-9241-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.
引用
收藏
页码：S363 / S365
页数：3
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