Influence of barrier material on spin splitting due to inversion asymmetry in heterostructures

Influence of barrier material on the spin splitting of conduction subbands in heterostructures because of structure inversion asymmetry (Bychkov-Rashba splitting) is studied. The spin splitting at a vanishing magnetic field is calculated for two heterostructures: InAs/SiO2 and InAs/In0.8Al0.2As, having the same well material InAs but very different barrier materials. It is demonstrated that the barrier material strongly influences the spin splitting of the ground conduction subband in InAs. The spin splittings for both heterostructures are computed as functions of electron density, we obtain the splitting in InAs/SiO2 almost twice larger than that in InAs/In0.8Al0.2As. The influence of spin-dependent part of the boundary conditions on the spin spin splitting is studied and it is shown that for considered heterostructures it changes the splitting up to 25% of its value. It is emphasized that the Bychkov-Rashba spin splitting is not proportional to the average electric field in heterostructure.