Metalorganic chemical vapor deposition (MOCVD) of aluminum and gallium nitride thin films

被引：0
|
作者：
Economou, DJ [1 ]
Hoffman, DM [1 ]
Rangarajan, SR [1 ]
Athavale, SD [1 ]
Liu, JR [1 ]
Zheng, ZS [1 ]
Chu, WK [1 ]
机构：
[1] UNIV HOUSTON,HOUSTON,TX 77204
来源：
PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES | 1996年 / 96卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：69 / 75
页数：7
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