N-Polar III-Nitride Green (540 nm) Light Emitting Diode

被引：83
|
作者：
Akyol, Fatih [1 ]
Nath, Digbijoy N. [1 ]
Gur, Emre [1 ,2 ]
Park, Pil Sung [1 ]
Rajan, Siddharth [1 ]
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期
关键词：
MOLECULAR-BEAM EPITAXY; GROWTH; BLUE; INGAN; INN;
D O I：
10.1143/JJAP.50.052101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N-2 plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In0.29Ga0.71N quantum wells were grown at a temperature of 600 degrees C by applying a new growth model. LED structures exhibited green emission, and electroluminescence measurements on the test structure showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm(2). This work is the first demonstration of an N-polar LED with emission in the green wavelength range. (C) 2011 The Japan Society of Applied Physics
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页数：3
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