A thermally robust perpendicular magnetic tunnel junction with the FeTa decoupling layer

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作者
Yu, J. [1 ]
Wang, X. [1 ]
Fukuzawa, H. [1 ]
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[1] ASTAR, Emerging Memories, Inst Microelect, Singapore, Singapore
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页数:1
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