A thermally robust perpendicular magnetic tunnel junction with the FeTa decoupling layer

被引：0
|
作者：
Yu, J. [1 ]
Wang, X. [1 ]
Fukuzawa, H. [1 ]
机构：
[1] ASTAR, Emerging Memories, Inst Microelect, Singapore, Singapore
来源：
2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：1
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