C60 adsorption onto the one-atomic-layer In films on Si(111) surface

被引：11

作者：

Gruznev, D. V. ^{[1
]}

Matetskiy, A. V. ^{[1
]}

Gvozd, I. V. ^{[1
]}

Zotov, A. V. ^{[1
,2
,3
]}

Saranin, A. A. ^{[1
,2
]}

机构：

[1] Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia

[3] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia

来源：

SURFACE SCIENCE | 2011年 / 605卷 / 23-24期

基金：

俄罗斯基础研究基金会;

关键词：

Atom-solid interactions; Silicon; Indium; Fullerene; Surface structure; Morphology; Roughness; Topography; Scanning tunneling microscopy (STM); ROOT 3-IN SURFACE; STM; TEMPERATURE; SUBSTRATE; GROWTH;

D O I：

10.1016/j.susc.2011.07.008

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied C-60 adsorption onto the In-induced Si(111) reconstructions, Si(111)2x2-In. Si(111)-hex-root 7 x root 3-In, and Si(111)-rec-root 7 x root 3-In, which all represent essentially one-atomic-layer In films residing atop a bulk-like Si(111) substrate. The reconstructions have various In densities, incorporating 0.75, 1.0, and 1.2 ML of In, respectively. We have found that C-60 adsorption onto these reconstruction is accompanied by the mass transport within In atomic layer, which is manifested by developing the domains of a more dense In/Si(111) reconstruction on the surface in between C-60. This observation provides a direct evidence for the displacement of In atoms from beneath C-60 to the surrounding surface area. The plausible driven force of the C-60-induced In displacement is a tendency of C-60 to change relatively modest bonding with In layer to a more stronger bond with Si(111) substrate. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1951 / 1955

页数：5

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