State of the Art Sub-Terahertz Switching Solutions

被引:14
|
作者
Sobolewski, Jakub [1 ]
Yashchyshyn, Yevhen [1 ]
机构
[1] Warsaw Univ Technol, Inst Radioelect & Multimedia Technol, PL-00665 Warsaw, Poland
基金
欧盟地平线“2020”;
关键词
Transistors; Insertion loss; Topology; Silicon germanium; Power transmission lines; Impedance; Heterojunction bipolar transistors; 2D materials; CMOS; graphene; HBT; HEMT; MEMS; millimeter wave circuits; phase-change materials; PIN diode; RF switch; LOW INSERTION LOSS; MEMS SPDT SWITCH; S-PIN DIODES; WIDE-BAND; SPST SWITCH; TRANSMISSION-LINE; GHZ; PERFORMANCE; DESIGN;
D O I
10.1109/ACCESS.2022.3147019
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper the state of the art in RF switches for mm-wave frequency range is summarized and evaluated. Several leading technologies is presented from typical semiconductor devices based on transistors and diodes on Si, SiGe or III-V semiconductor substrates to more unconventional solutions such as microelectromechanical or phase-change material switches. The most important parameters and characteristics for those technologies are gathered and compiled for comparison. Besides different technologies, also various switch topologies of mm-wave switches are presented, assessed and compared. Furthermore, new emerging technological solutions approaching mm-wave range involving two-dimensional materials are also presented. Their evaluation is focused on proposed designs and current results for experimentally evaluated prototypes. Although the performance of these devices are currently not competitive with more traditional approaches, some reported results near the mm-wave range makes them a promising solution for future mm-wave switches and an interesting topic for further research and development.
引用
收藏
页码:12983 / 12999
页数:17
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