Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN

被引：4

作者：

Plucinski, L

Learmonth, T

Colakerol, L

Bernardis, S

Zhang, YF

Glans, PA

Smith, KE

Zakharov, AA

Nyholm, R

Grzegory, I

Suski, T

Porowski, S

Friel, I

Moustakas, TD

机构：

[1] Boston Univ, Dept Phys, Boston, MA 02215 USA

[2] Lund Univ, MAX Lab, S-22100 Lund, Sweden

[3] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[4] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

SOLID STATE COMMUNICATIONS | 2005年 / 136卷 / 04期

基金：

美国国家科学基金会;

关键词：

semiconductors; electronic band structure; photoelectron spectroscopies; synchrotron radiation;

D O I：

10.1016/j.ssc.2005.07.030

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoemission spectra recorded near the Ga 3p photothreshold from GaN have been found to contain satellites of the main Ga 3d emission line. The intensity of these satellites resonate at this threshold, and are associated with a 3d(8) state. The correlation energies and binding energies for the satellite multiplet have been measured for the satellite and related Auger transitions. The satellite multiplet contains additional constant binding energy features not observed in previous studies of other Ga compounds. The present results are compared with those for Gal? and GaAs. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：191 / 195

页数：5

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