Precipitation of silicon nanoclusters by laser direct-write

被引：5
|
作者：
Mustafeez, Waqas [1 ]
Lee, Daeho [2 ]
Grigoropoulos, Costas [2 ]
Salleo, Alberto [1 ]
机构：
[1] Geballe Lab Adv Mat, Stanford, CA 94305 USA
[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
来源：
OPTICS EXPRESS | 2011年 / 19卷 / 16期
基金：
美国国家科学基金会;
关键词：
NANOCRYSTALS; PHOTOLUMINESCENCE; EMISSION; GLASS; SIO2;
D O I：
10.1364/OE.19.015452
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The ability to use a laser to direct-write tracks of localized emission enhancement in PECVD-deposited Silicon rich oxide (SRO) films is demonstrated. For this purpose, 400nm thick SRO films with varying excess Si content were irradiated with loosely focused 355nm, 12ps pulses at 80MHz while being translated at 2mm/s. Mapping of areas irradiated with energies between 4.7nJ and 5.5nJ/pulse exhibits regions with the largest emission enhancement. Raman and photoluminescence (PL) measurements suggest precipitation of amorphous and crystalline Si nanoclusters. In the most emissive regions, the PL efficiency of the laser-annealed films was similar to 70% of that obtained by standard oven-annealing processes. Stress in Si crystals in some areas is identified as leading to quenching of the PL and is hypothesized to be caused by the densification of SRO matrix. (C) 2011 Optical Society of America
引用
收藏
页码：15452 / 15458
页数：7
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