Numerical Studies into the Parameter Space Conducive to "Lock-On" in a GaN Photoconductive Switch for High Power Applications

被引：12

作者：

Chowdhury, Animesh R. ^{[1
]}

Nikishin, Sergey ^{[1
]}

Dickens, James ^{[1
]}

Neuber, Andreas ^{[1
]}

Joshi, Ravi P. ^{[1
]}

Ness, Richard ^{[2
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

[2] Ness Engn Inc, San Diego, CA USA

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2019年 / 26卷 / 02期

关键词：

lock-on; photoconductive switch; pulsed power application; semi-insulating semiconductors; SEMICONDUCTOR SWITCH; FIELD; GAAS; SIMULATIONS;

D O I：

10.1109/TDEI.2018.007805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the "Lock-On" phenomenon. A one-dimensional, time-dependent model based on drift-diffusion theory is used. The model was first tested for GaAs and shown to yield good agreement with data, before applying it to GaN simulations. The main findings are that compensated GaN with deeper traps nearer the midgap at higher densities, and/or multiple levels around the mid-gap would aid in driving the PCSS towards Lock-On. The initial average threshold field for Lock-On in GaN is predicted to be around 150 kV/cm, though this would be strongly dependent on the trap parameters of a sample.

引用

页码：469 / 475

页数：7

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