Non-destructive evaluation of the circuit-dependent turn-off limits of gate turn-off thyristors by the detection of the local current density

被引：0
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作者：
Metzner, D
Otto, J
Schulze, HJ
机构：
来源：
ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 1997年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：85 / 88
页数：4
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