Femtosecond, time-resolved differential reflectivity measurements in Ga1-xMnxAs epitaxial thin films

被引：0

作者：

Pepe, G. P. ^{[1
,2
]}

de Lisio, C. ^{[1
,2
]}

Parlato, L. ^{[1
,2
]}

Pagliarulo, V. ^{[1
,2
]}

Marrocco, N. ^{[1
,2
]}

Zhao, C.

Novak, V. ^{[3
,4
,6
,7
]}

Olejnik, K. ^{[5
]}

Cukr, M. ^{[5
]}

Sobolewski, Roman ^{[3
,4
,6
,7
]}

机构：

[1] CNR INFM Coherentia, Ple Tecchio 80, I-80125 Naples, Italy

[2] Univ Napoli Federico II, Dip Sci Fis, I-80125 Naples, Italy

[3] Univ Rochester, Mat Sci Program, Rochester, NY 14627 USA

[4] Univ Rochester, Laser Energet Lab, Rochester, NY 14627 USA

[5] Acad Sci Czech Republic, Inst Phys, Prague, Czech Republic

[6] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

[7] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA

来源：

NONLINEAR OPTICS AND APPLICATIONS III | 2009年 / 7354卷

基金：

美国国家科学基金会;

关键词：

optical pump-probe spectroscopy; magnetic semiconductors; carrier relaxation; spintronics; femtosecond lasers; CARRIER LIFETIME; GAAS;

D O I：

10.1117/12.823838

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Magnetic semiconductors such as Ga1-xMnxAs have attracted a great interest in the last years due to their high potential as advanced-performance materials in optical detection and in novel spintronic devices. The carrier dynamics and the nonlinear optical response in low-temperature-grown GaAs/Ga1-xMnxAs heterostructures represent an interesting topic much less explored than their electronic transport and/or structural studies. We report our optical investigations of Ga1-xMnxAs films, grown with different Mn concentrations and subject to annealing conditions, by time-resolved, femtosecond pump-probe, differential reflectivity measurements. The analysis of the carrier relaxation times at low temperatures is presented and discussed according to nonequilibrium theories for electron scattering in magnetic materials.

引用

页数：8

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