Femtosecond, time-resolved differential reflectivity measurements in Ga1-xMnxAs epitaxial thin films

被引：0
|
作者：
Pepe, G. P. [1 ,2 ]
de Lisio, C. [1 ,2 ]
Parlato, L. [1 ,2 ]
Pagliarulo, V. [1 ,2 ]
Marrocco, N. [1 ,2 ]
Zhao, C.
Novak, V. [3 ,4 ,6 ,7 ]
Olejnik, K. [5 ]
Cukr, M. [5 ]
Sobolewski, Roman [3 ,4 ,6 ,7 ]
机构：
[1] CNR INFM Coherentia, Ple Tecchio 80, I-80125 Naples, Italy
[2] Univ Napoli Federico II, Dip Sci Fis, I-80125 Naples, Italy
[3] Univ Rochester, Mat Sci Program, Rochester, NY 14627 USA
[4] Univ Rochester, Laser Energet Lab, Rochester, NY 14627 USA
[5] Acad Sci Czech Republic, Inst Phys, Prague, Czech Republic
[6] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
[7] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
来源：
NONLINEAR OPTICS AND APPLICATIONS III | 2009年 / 7354卷
基金：
美国国家科学基金会;
关键词：
optical pump-probe spectroscopy; magnetic semiconductors; carrier relaxation; spintronics; femtosecond lasers; CARRIER LIFETIME; GAAS;
D O I：
10.1117/12.823838
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Magnetic semiconductors such as Ga1-xMnxAs have attracted a great interest in the last years due to their high potential as advanced-performance materials in optical detection and in novel spintronic devices. The carrier dynamics and the nonlinear optical response in low-temperature-grown GaAs/Ga1-xMnxAs heterostructures represent an interesting topic much less explored than their electronic transport and/or structural studies. We report our optical investigations of Ga1-xMnxAs films, grown with different Mn concentrations and subject to annealing conditions, by time-resolved, femtosecond pump-probe, differential reflectivity measurements. The analysis of the carrier relaxation times at low temperatures is presented and discussed according to nonequilibrium theories for electron scattering in magnetic materials.
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页数：8
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