Electron-paramagnetic-resonance study of the (100)Si/Si3N4 interface

The (100)Si/Si3N (4) interface, formed by the deposition of Si3N4 layers on bulk (100) Si by distributed electron-cyclotron-resonance plasma-enhanced chemical vapor deposition, has been studied by electron-paramagnetic-resonance spectroscopy. Only one interface defect, the P-b0 center, characterized by trigonal point symmetry and principal values of the g tensor, g(parallel to) = 2.0018+/-0.0002 and g(perpendicular to) =2.0089+/-0.0002, has been detected. Its area concentration is of the order of (2-5) X 10(11) cm(-2). The characteristic defect of the (100)Si/SiO2 interface, the Pbl center, is not observed. The Si3N4 layers contain one main native bulk defect, the K center, at concentrations of 5 X 10(17) cm(-3). [S0163-1829(99)11315-8].